10-FY07BIA041MC-M528E58 Datasheet, PDF (6/25 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY07BIA041MC-M528E58
preliminary datasheet
Pseudo H-Bridge
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
0.30
0.25
0.20
MOSFET
E_{on High T}
E_{on Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
0.8
0.6
0.15
0.4
E_{off High T}
0.10
E_{off Low T}
0.2
0.05
0.00
0.0
0
10
20
30
40
50 _{I C (A)} 60
0
4
8
12
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
400
V
10
V
2
Ω
2
Ω
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
400
V
10
V
30
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
0.10
0.08
0.06
0.04
0.02
FWD
E_{rec High T}
E_{rec Low T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
10
20
30
40
50
60
I C (A)
0.00
0
4
8
12
With an inductive load at
T_j =
25/125 °C
V_CE =
400
V
V_GE =
10
V
R_gon =
2
Ω
With an inductive load at
T_j =
25/125 °C
V_CE =
400
V
V_GE =
10
V
I_C =
30
A
MOSFET
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
16
R G (Ω) 20
FWD
E_{rec High T}
E_{rec Low T}
16
R G (Ω) ²⁰
Copyright by Vincotech
6
Revision: 1