10-FY07BIA041MC-M528E58 Datasheet, PDF (14/25 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY07BIA041MC-M528E58
preliminary datasheet
INPUT BOOST
Figure 9
Typical switching times as a
function of collector current
t = f(I_D)
1
t_doff
0.1
t_don
t_f
0.01
t_r
0.001
0
10
20
30
With an inductive load at
T_j =
125
°C
V_DS =
400
V
V_GS =
10
V
R_gon =
2
Ω
R_goff =
2
Ω
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0.02
BOOST MOSFET
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
0.1
0.01
0.001
40
50
I D (A) ⁶⁰
0
5
10
With an inductive load at
T_j =
125
°C
V_DS =
400
V
V_GS =
10
V
I_C =
30
A
BOOST FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0.02
BOOST MOSFET
t_doff
t_don
t_f
t_r
15
RG(Ω )
20
BOOST FWD
0.015
0.01
0.005
t_{rr High T}
t_{rr Low T}
0.015
0.01
0.005
0
0
0
10
20
30
40
50
60
I C (A)
0
5
10
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
10
V
2
Ω
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
400
V
30
A
10
V
t_{rr High T}
t_{rr Low T}
15
R Gon ( Ω )
20
Copyright by Vincotech
14
Revision: 1