10-FY07BIA041MC-M528E58 Datasheet, PDF (22/25 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY07BIA041MC-M528E58
preliminary datasheet
Switching Definitions H-Bridge MOSFET
Figure 5
H-Bridge MOSFET
Turn-off Switching Waveforms & definition of t_Eoff
150
%
I_{C 1%}
E_off
100
Figure 6
Turn-on Switching Waveforms & definition of t_Eon
125
H-Bridge MOSFET
%
100
P_on
E_on
75
50
50
V_{GE 90%}
0
t_Eoff
-50
-0.05
0
0.05
0.1
P_off (100%) =
E_off (100%) =
t_Eoff =
12.04
kW
0.03
mJ
0.16
μs
P_off
0.15 _{time (us)} 0.2
25
V_{GE 10%}
0
-25
3.98
4
P_on (100%) =
E_on (100%) =
t_Eon =
t_Eon
4.02
4.04
12.04
kW
0.14
mJ
0.07
μs
V_{CE 3%}
4.06
4.08
4.1
time(us)
Figure 7
Gate voltage vs Gate charge (measured)
15
10
5
0
-5
-10
-50
V_GEoff =
V_GEon =
V_C (100%) =
I_C (100%) =
Q_g =
0
50
100
0
V
10
V
400
V
30
A
183.73 nC
H-Bridge MOSFET
Figure 8
Turn-off Switching Waveforms & definition of t_rr
120
%
I_d
80
t_rr
40
H-Bridge FWD
V_d
0
-40
-80
fitted
I_{RRM 10%}
I_{RRM 90%}
I_{RRM 100%}
150
200
Qg (nC)
-120
4.03
4.04
4.05
V_d (100%) =
I_d (100%) =
I_RRM (100%) =
t_rr =
400
V
30
A
-24
A
0.01
μs
4.06
4.07
time(us)
Copyright by Vincotech
22
Revision: 1