10-FY07BIA041MC-M528E58 Datasheet, PDF (7/25 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY07BIA041MC-M528E58
preliminary datasheet
Pseudo H-Bridge
Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1.00
MOSFET
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1.00
0.10
t_doff
0.10
t_don
0.01
t_r
0.01
t_f
0.00
0.00
0
10
20
30
40
50 I _C (A) 60
0
4
8
12
With an inductive load at
T_j =
125
°C
V_CE =
400
V
V_GE =
10
V
R_gon =
2
Ω
R_goff =
2
Ω
With an inductive load at
T_j =
125
°C
V_CE =
400
V
V_GE =
10
V
I_C =
30
A
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0.015
FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0.015
0.012
0.009
t_{rr High T}
t_{rr Low T}
0.012
0.009
0.006
0.006
0.003
0.003
0.000
0.000
0
10
20
30
40
50 _{I C (A)} 60
0
4
8
12
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
10
V
2
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
400
V
30
A
10
V
MOSFET
t_doff
t_don
t_r
t_f
16
R G (Ω) ²⁰
FWD
t_{rr High T}
t_{rr Low T}
16
R gon (Ω) ²⁰
Copyright by Vincotech
7
Revision: 1