10-FY07BIA041MC-M528E58 Datasheet, PDF (15/25 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY07BIA041MC-M528E58
preliminary datasheet
INPUT BOOST
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
0.4
BOOST FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
0.25
0.3
Q_{rr Low T}
0.2
Q_{rr High T}
0.15
0.2
0.1
0.1
0.05
0
0
0
At
10
20
30
40
50
I C (A) ⁶⁰
0
5
10
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
10
V
2
Ω
Tj =
VR =
IF =
VGS =
25/125 °C
400
V
30
A
10
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
40
BOOST FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
40
I_{RRM Low T}
30
30
I_{RRM High T}
20
20
BOOST FWD
Q_{rr High T}
Q_{rr Low T}
15
R Gon (Ω)
20
BOOST FWD
10
10
0
0
0
10
20
30
40
50 _{I C (A)} 60
0
5
10
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
10
V
2
Ω
At
T_j =
V_R =
I_F =
V_GS =
25/125 °C
400
V
30
A
10
V
I_{RRM Low T}
I_{RRM High T}
15
R Gon ( Ω ) ²⁰
Copyright by Vincotech
15
Revision: 1