10-FY07BIA041MC-M528E58 Datasheet, PDF (8/25 Pages) Vincotech – Low inductive 12mm flow1 package

Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
0.4
0.3
0.2
0.1
10-FY07BIA041MC-M528E58
preliminary datasheet
Pseudo H-Bridge
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
0.4
FWD
Q_{rr High T}
0.3
Q_{rr Low T}
0.2
0.1
Q_{rr High T}
Q_{rr Low T}
0.0
0
10
20
30
40
50 _{I C (A)} 60
0
0
4
8
12
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
10
V
2
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
400
V
30
A
10
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
40
30
20
FWD
I_{RRM Low T}
I_{RRM High T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
40
I_{RRM Low T}
30
20
I_{RRM High T}
10
10
16
R gon ( Ω) ²⁰
FWD
0
0
0
10
20
30
40
50
60
I C (A)
0
5
10
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
400
V
10
V
2
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
400
V
30
A
10
V
15
R gon (Ω) ²⁰
Copyright by Vincotech
8
Revision: 1