10-FY074PA050SM-M582F38 Datasheet, PDF (9/17 Pages) Vincotech – 650V IGBT H5 and 650V Stealth Si diode

10-FY074PA050SM-M582F38
datasheet
H-bridge Switching Characteristics
Figure 5.
Typical swit ching t imes as a f unct ion of collector current
t = f(I C)
1
IGBT
Figure 6.
Typical swit ching t imes as a f unct ion of gate resistor
t = f(r g)
1
0,1
t_{d(off )}
0,1
t_d(on)
t_r
0,01
0,01
t_f
IGBT
t_d(on)
t_{d(off )}
t_r
t_f
0,001
0
10
20
30
40
50
60
70
80
90
100
I _C (A)
With an induc tive load at
Tj=
150
°C
V CE =
300
V
V GE =
±15
V
R gon =
8
Ω
R goff =
8
Ω
Figure 7.
Typical reverse recovery t ime as a f unction of collector current
t rr = f(I C)
0,16
FWD
t_rr
0,12
t_rr
0,001
0
5
10
15
20
25
With an inductive load at
Tj=
150
°C
V CE =
300
V
V GE =
±15
V
IC =
50
A
Figure 8.
Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or
t rr = f(R gon)
0,2
0,15
30
35
r_g (Ω)
FWD
t_rr
t_rr
0,08
0,04
t_rr
0
0
10
20
30
40
50
60
70
80
90
100
I_C (A)
At
V CE=
300
V
V GE =
±15
V
R gon =
8
Ω
25 °C
T j:
125 °C
150 °C
0,1
t_rr
0,05
0
0
5
10
At
V CE =
300
V
V GE =
±15
V
IC =
50
A
15
20
25
30
35
R_{g on} (Ω)
25 °C
Tj:
125 °C
150 °C
Copyright Vincotech
9
23 Jul. 2015 / Revision 2