10-FY074PA050SM-M582F38 Datasheet, PDF (11/17 Pages) Vincotech – 650V IGBT H5 and 650V Stealth Si diode

10-FY074PA050SM-M582F38
datasheet
H-bridge Switching Characteristics
Figure 13.
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
di F/dt ,di rr/dt = f(I c)
10000
di_F / dt
di_{r r}/dt
8000
FWD
Figure 14.
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt ,di rr/dt = f(R g)
12000
di _F / dt
di _rr/dt
FWD
9000
6000
4000
2000
6000
3000
0
0
10
20
30
40
50
60
70
80
90 100
IC (A)
At
V CE = 300
V
25 °C
V GE =
±15
V
T j:
125 °C
R gon =
8
Ω
150 °C
Figure 15.
Reverse bias saf e operating area
I C = f(V CE)
120
100
I_{C MAX}
IGBT
80
60
40
20
0
0
At
100
200
300
400
500
600
700
VC E (V)
Tj =
175
°C
R gon =
8
Ω
R goff =
8
Ω
0
0
5
10
15
20
25
30
35
Rg on (Ω)
At
V CE =
300
V
V GE =
±15
V
I C=
50
A
Copyright Vincotech
11
23 Jul. 2015 / Revision 2