10-FY074PA050SM-M582F38 Datasheet, PDF (12/17 Pages) Vincotech – 650V IGBT H5 and 650V Stealth Si diode

10-FY074PA050SM-M582F38
datasheet
H-bridge Switching Definitions
General conditions
Tj
R gon
= 150 °C
= 8Ω
R goff
= 8Ω
Figure 1.
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
160
%
140
IGBT
120
t_doff
V_CE
100
V_{GE 90%}
V_{CE 90%}
80
60
V_GE
I_C
40
t_Eoff
20
0
I_{C 1%}
-20
-0,1
-0,05
0
0,05
0,1
0,15
0,2
t (µs)
V GE (0%) =
- 15
V
V GE (100%) =
15
V
V C (100%) =
I C (100%) =
300
V
50
A
t doff =
0,076
µs
t Eoff =
Figure 3.
0,125
µs
IGBT
Turn-of f Swit ching Wavef orms & def init ion of t f
150
%
125
I_C
100
75
fitted
V_CE
I_{C 90%}
I_{C 60%}
50
I_{C 40%}
25
0
-25
-0,015
-0,005
V C (100%) =
I C (100%) =
tf =
0,005
0,015
t_f
0,025
300
V
50
A
0,009
µs
I_C10%
0,035
0,045
t ( µs)
Figure 2.
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
250
%
200
IGBT
150
V_CE
100
I_C
V_GE
t_don
50
V_{GE 10%}
0
I_{C 10%}
V_{CE 3%}
-50
2,95
t_Eon
3
3,05
3,1
3,15
V GE (0%) =
V GE (100%) =
V C (100%) =
I C (100%) =
t don =
t Eon =
Figure 4.
- 15
V
15
V
300
V
50
A
0,060
µs
0,152
µs
Turn-on Swit ching Wavef orms & def init ion of tr
200
%
175
150
125
V_CE
100
75
50
I_{C 90%}
t_r
25
I_{C 10%}
0
-25
3
V C (100%) =
I C (100%) =
tr =
3,02
3,04
300
V
50
A
0,011
µs
3,06
3,2
3,25
3,3
t (µs)
IGBT
I_C
3,08
3,1
t (µs)
Copyright Vincotech
12
23 Jul. 2015 / Revision 2