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| 10-FY074PA050SM-M582F38 Datasheet, PDF (7/17 Pages) Vincotech – 650V IGBT H5 and 650V Stealth Si diode | |||
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10-FY074PA050SM-M582F38
datasheet
Typical forward characteristics
I F = f(V F)
90
75
60
45
30
15
0
0
1
2
tp =
250
µs
H-bridge Diode Characteristics
FWD
Transient thermal impedance as a function of pulse width
Z th(j-s) = f(t p)
101
FWD
100
3
4
25 °C
T j:
125 °C
150 °C
5
VF (V)
10-1
10-2
10-4
10-3
10-2
10-1
D=
R th(j-s) =
tp / T
1,83
K/W
FWD thermal model values
R (K/W)
6,05E-02
Ï (s)
3,63E+00
1,50E-01
6,48E-01
8,27E-01
7,70E-02
4,06E-01
1,51E-02
2,16E-01
3,45E-03
1,73E-01
7,36E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100
101
1023
tp (s)
Thermistor Characteristics
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
25000
Typical Thermistor resistance values
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
7
23 Jul. 2015 / Revision 2
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