10-FY074PA050SM-M582F38 Datasheet, PDF (4/17 Pages) Vincotech – 650V IGBT H5 and 650V Stealth Si diode

10-FY074PA050SM-M582F38
datasheet
Inverter Diode
Parameter
Static
Forward voltage
Reverse leakage c urrent
Thermal
Thermal resistance junc tion to sink
FWD Switching
Peak recovery current
Reverse recovery time
Recovered charge
Reverse recovered energy
Peak rate of fall of recovery current
Thermistor
Parameter
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
Symbol
VF
Ir
Conditions
Value
Unit
V _r [V] I _F [A] T _j [°C] Min Typ Max
25
30
125
150
25
665
150
2,46
2,6
2,03
V
-
10
µA
-
R th(j-s)
Phase- Change
Material
ʎ=3,4W/mK
I _RRM
t rr
di /dt = 4872 A/µs
Q r di /dt = 4560 A/µs ±15
300
50
di /dt = 4066 A/µs
E _rec
(di rf/dt )max
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
1,83
39
47
49
20
100
117
0,783
1,798
2,183
0,133
0,376
0,466
6525
3267
2773
K/W
A
ns
µC
mWs
A/µs
Symbol
Conditions
V _GE [V] V _CE [V]
I _C [A]
T _j[ °C]
Value
Min
Typ Max
Unit
R
ΔR/R R100=1486 Ω
P
B(25/50) Tol. ±3%
B(25/100) Tol. ±3%
25
22
kΩ
100
-12
+12
%
25
200
mW
25
2
mW/K
25
3950
K
25
3998
K
B
Copyright Vincotech
4
23 Jul. 2015 / Revision 2