10-FY074PA050SM-M582F38 Datasheet, PDF (5/17 Pages) Vincotech – 650V IGBT H5 and 650V Stealth Si diode

10-FY074PA050SM-M582F38
datasheet
Typical output characteristics
I C = f(V CE)
150
H-bridge Switch Characteristics
IGBT
Typical output characteristics
I C = f(V CE)
150
IGBT
120
120
90
60
30
0
0
1
2
tp =
250
µs
V GE=
15
V
Typical transfer characteristics
I C = f(V GE)
50
3
4
25 °C
125 °C
T _j:
150 °C
5
V_{C E} (V)
IGBT
40
30
90
60
30
0
0
1
2
3
tp =
Tj =
V GE from
250
µs
125
°C
8 V to 18 V in steps of 1 V
4
5
V_{C E} (V)
Transient Thermal Impedance as function of Pulse duration IGBT
Z th(j-s) = f(t p)
10¹
10⁰
20
10
0
0
tp =
V CE =
1
100
10
2
3
4
5
6
7
V_GE (V)
µs
25 °C
V
125 °C
T _j:
150 °C
10^-1
10^-2
10^-4
10^-3
10^-2
10^-1
10
D=
tp / T
R th(j-s) =
1,13
K/W
IGBT thermal model values
R th (K/W)
τ (s)
7,12E- 02
8,15E+00
1,29E- 01
6,00E- 01
4,31E- 01
9,13E- 02
3,15E- 01
2,59E- 02
1,31E- 01
5,80E- 03
5,02E- 02
8,53E- 04
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
0,5
0,2
0,1
0,05
0,02
0,01
10¹
10²
t _p (s)
Copyright Vincotech
5
23 Jul. 2015 / Revision 2