10-FY074PA050SM-M582F38 Datasheet, PDF (13/17 Pages) Vincotech – 650V IGBT H5 and 650V Stealth Si diode

10-FY074PA050SM-M582F38
datasheet
H-bridge Switching Definitions
Figure 5.
Turn-of f Swit ching Wavef orms & def init ion of t Eof f
125
%
100
P_off
75
IGBT
I_{C 1%}
E_off
50
25
V_{GE 90%}
0
-25
-0,1
P off (100%) =
E off (100%) =
t Eoff =
-0,05
14,99
0,34
0,13
t_Eoff
0
kW
mJ
µs
0,05
0,1
t (µs)
Figure 6.
Turn-on Swit ching Wavef orms & def init ion of tEon
150
%
125
100
IGBT
P_on
E_on
75
50
25
0
-25
2,9
P on (100%) =
E on (100%) =
t Eon =
V_{GE 10%}
t_Eon
2,95
3
14,99
0,56
0,15
3,05
kW
mJ
µs
V_{CE 3%}
3,1
3,15
t ( µs)
Figure 7.
Turn-of f Swit ching Wavef orms & def init ion of t rr
125
%
100
I_d
75
t_rr
50
25
0
V_d
-25
-50
fitted
-75
-100
-125
3
I_RR^IRMR₁^M_009% ^0%
3,05
3,1
V d (100%) =
I d (100%) =
I RRM (100%) =
t rr =
300
V
50
A
- 49
A
0,117
µs
FWD
I_{RRM 10%}
3,15
3,2
t (µs)
Copyright Vincotech
13
23 Jul. 2015 / Revision 2