10-FY074PA050SM-M582F38 Datasheet, PDF (2/17 Pages) Vincotech – 650V IGBT H5 and 650V Stealth Si diode

10-FY074PA050SM-M582F38
datasheet
Parameter
H-bridge Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Maximum Junction Temperature
Module Properties
Parameter
Thermal Properties
Storage temperature
Operation Junction Temperature
Isolation Properties
Isolation voltage
Creepage distance
Clearanc e
Comparative Tracking Index
Symbol
Conditions
V RRM
IF
IFRM
P tot
T jmax
T j=T jmax
T j=T jmax
T h=80°C
T h=80°C
Value
650
29
180
52
175
Unit
V
A
A
W
°C
Symbol
T stg
T jop
Conditions
Value
Unit
- 40…+125
°C
-40…+(T jmax - 25)
°C
V isol
DC voltage
t p=2s
4000
V
min 12,7
mm
8,47
mm
CTI
>200
Copyright Vincotech
2
23 Jul. 2015 / Revision 2