10-FY074PA050SM-M582F38 Datasheet, PDF (3/17 Pages) Vincotech – 650V IGBT H5 and 650V Stealth Si diode

10-FY074PA050SM-M582F38
datasheet
H-bridge Switch
T_Paj=_rameter
Static
Gate-emitter threshold voltage
Collec tor-emitter saturation voltage
Collec tor-emitter c ut-off current
Gate-emitter leakage c urrent
Internal gate resistance
Input capacitance
Output capacitance
Reverse transfer capac itance
Gate c harge
Thermal
Thermal resistance junc tion to sink
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Characteristic Values
Symbol
V _GE(th) V GE⁼V CE
V _CEsat
I _CES
I _GES
rg
C _ies
C _oes f=1 MHz
C _res
Q_g
Conditions
Value
V _GE [V] V _CE [V] I _C [A] T _j[ °C] Min Typ Max
Unit
25
0,0005
125
25
15
50
125
150
25
0
650
125
25
20
0
125
0
25
25
15
520
50
25
3,3
4
4,7
V
1
1,82
2,22
2,00
V
-
40
µA
120
nA
none
Ω
3000
50
pF
11
120
nC
R _th(j-s)
Phase- Change
Material
ʎ=3,4W/mK
t _d(on)
R goff = 8 Ω
tr
R _gon = 8 Ω
t d(off)
tf
±15
300
50
Q _rFWD = 0,8 µC
E _on Q rFWD = 1,8 µC
Q rFWD = 2,2 µC
E off
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
1,13
59
60
60
9
11
11
64
74
76
4
8
9
0,412
0,516
0,555
0,170
0,303
0,337
K/W
ns
mWs
Copyright Vincotech
3
23 Jul. 2015 / Revision 2