10-FY074PA050SM-M582F38 Datasheet, PDF (1/17 Pages) Vincotech – 650V IGBT H5 and 650V Stealth Si diode

flow PACK 1
Features
● 650V IGBT H5 and 650V Stealth Si diode
● High-efficiency
● Ultra-fast switching frequency
● Integrated temperature sensor
● Low inductance layout
Target applications
● Solar Inverters
● Power Supply
● Inverter based welding
Types
● 10-FY074PA050SM-M582F38
10-FY074PA050SM-M582F38
datasheet
650 V / 50 A
flow 1 12mm housing
Schematic
Tj=25°C, unless otherwise specified
T^Pa_j=^rameter
H-bridge Switch
Collector-emitter voltage
Collector current
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
V CES
IC
I CRM
P tot
VGES
T jmax
T j=T jmax
t p limited by T jmax
T j=T jmax
T S=80°C
T S=80°C
Value
650
43
150
84
±20
175
Unit
V
A
A
W
V
°C
Copyright Vincotech
1
23 Jul. 2015 / Revision 2