10-FY074PA050SM-M582F38 Datasheet, PDF (8/17 Pages) Vincotech – 650V IGBT H5 and 650V Stealth Si diode

10-FY074PA050SM-M582F38
datasheet
H-bridge Switching Characteristics
Figure 1.
Typical swit ching energy losses as a f unction of collector current
E = f(I C)
1,2
0,9
0,6
0,3
IGBT
E_on
E_on
E_on
E_off
E_off
E_off
0
0
10
20
30
40
50
60
70
80
With an induc tive load at
V CE =
300
V
V GE =
±15
V
R gon =
8
Ω
R goff =
8
Ω
25 °C
T j:
125 °C
150 °C
Figure 3.
Typical reverse recovered energy loss as a f unction of collector current
E rec = f(I c)
0,8
90
100
I_C (A)
FWD
Figure 2.
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(rg)
1,6
IGBT
1,2
E_{on Eon}
E_on
0,8
0,4
0
0
5
10
With an inductive load at
V CE =
300
V
V GE =
±15
V
IC =
50
A
E_off
E_off
E_off
15
20
25
30 _{Rg ( Ω)} 35
25 °C
T j:
125 °C
150 °C
Figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E rec = f(r g )
0,6
FWD
0,6
E_rec
E_rec
0,4
0,2
E_rec
0
0
10
20
30
40
50
60
70
80
90
100
I C (A)
With an induc tive load at
25 °C
V CE =
300
V
T j:
125 °C
V GE =
±15
V
150 °C
R gon =
8
Ω
0,45
0,3
0,15
0
0
5
10
15
With an inductive load at
V CE =
300
V
V GE =
±15
V
IC =
50
A
E_rec
E_rec
E_rec
20
25
30
35
r_g (Ω)
25 °C
T j:
125 °C
150 °C
Copyright Vincotech
8
23 Jul. 2015 / Revision 2