BQ25890H Datasheet, PDF (9/66 Pages) Texas Instruments – I2C Controlled Single Cell 5-A Fast Charger

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BQ25890H
SLUSCC5 – SEPTEMBER 2016
Electrical Characteristics (continued)
V_{VBUS_UVLOZ} < V_VBUS < V_ACOV and V_VBUS > V_BAT + V_SLEEP, T_J = –40°C to +125°C and T_J = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
BATTERY CHARGER
V_{BAT(REG_RANGE)}
V_{BAT(REG_STEP)}
V_BAT(REG)
I_{(CHG_REG_RANGE)}
I_{(CHG_REG_STEP)}
Typical charge voltage range
Typical charge voltage step
Charge voltage resolution accuracy
Typical fast charge current regulation range
Typical fast charge current regulation step
I_{(CHG_REG_ACC)}
Fast charge current regulation accuracy
V_BAT(LOWV)
Battery LOWV falling threshold
Battery LOWV rising threshold
V_BAT = 4.208 V (REG06[7:2]=010111) or
V_BAT = 4.352 V (REG06[7:2]=100000)
T_J = –40°C to +85°C
V_BAT = 3.1 V or 3.8 V, I_CHG = 128 mA
T_J = –40°C to +85°C
V_BAT= 3.1 V or 3.8 V, I_CHG = 256 mA
T_J = –40°C to +85°C
V_BAT= 3.1 V or 3.8 V, I_CHG=1792 mA
T_J = –40°C to +85°C
Fast charge to precharge, BATLOWV
(REG06[1]) = 1
Precharge to fast charge, BATLOWV
(REG06[1])=1
(Typical 200-mV hysteresis)
3.840
-0.5%
0
-20%
-10%
-5%
2.6
2.8
4.608
V
16
mV
0.5%
5056
mA
64
mA
20%
10%
5%
2.8
2.9
V
3
3.1
V
I_{(PRECHG_RANGE)}
I_{(PRECHG_STEP)}
I_{(PRECHG_ACC)}
I_{(TERM_RANGE)}
I_{(TERM_STEP)}
I_{(TERM_ACC)}
V_(SHORT)
V_{(SHORT_HYST)}
I_(SHORT)
V_(RECHG)
I_SYS(LOAD)
R_ON(BATFET)
Precharge current range
Typical precharge current step
Precharge current accuracy
Termination current range
Typical termination current step
Termination current accuracy
Battery short voltage
Battery short voltage hysteresis
Battery short current
Recharge threshold below V_BATREG
System discharge load current
SYS-BAT MOSFET (BATFET) on-resistance
V_BAT=2.6 V, I_PRECHG = 256 mA
I_TERM = 256 mA, I_CHG<= 1344 mA
T_J = –20°C to +85°C
I_TERM = 256 mA, I_CHG> 1344 mA
T_J = –20°C to +85°C
VBAT falling
VBAT rising
VBAT < 2.2 V
V_BAT falling, VRECHG (REG06[0]=0) = 0
V_BAT falling, VRECHG (REG06[0]=0) = 1
V_SYS = 4.2 V
T_J = 25°C
T_J = –40°C to +125°C
64
–10%
64
–12%
–20%
30
1024
mA
64
mA
+10%
1024
mA
64
mA
12%
20%
2
V
200
mV
100
mA
100
mV
200
mV
mA
11
13
mΩ
11
19
mΩ
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