BQ25890H Datasheet, PDF (8/66 Pages) Texas Instruments – I2C Controlled Single Cell 5-A Fast Charger

BQ25890H
SLUSCC5 – SEPTEMBER 2016
www.ti.com
Electrical Characteristics (continued)
V_{VBUS_UVLOZ} < V_VBUS < V_ACOV and V_VBUS > V_BAT + V_SLEEP, T_J = –40°C to +125°C and T_J = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
VBUS/BAT POWER UP
V_{(VBUS_OP)}
VBUS operating range
3.9
14
V
V_{(VBUS_UVLOZ)}
VBUS for active I²C, no battery
3.6
V
V_(SLEEP)
V_(SLEEPZ)
V_(ACOV)
Sleep mode falling threshold
Sleep mode rising threshold
VBUS over-voltage rising threshold
VBUS over-voltage falling threshold
25
65
120
mV
130
250
370
mV
14
14.6
V
13.5
14
V
V_BAT(UVLOZ)
Battery for active I2C, no VBUS
V_BAT(DPL)
Battery depletion falling threshold
V_BAT(DPLZ)
Battery depletion rising threshold
V_(VBUSMIN)
Bad adapter detection threshold
I_(BADSRC)
Bad adapter detection current source
POWER-PATH MANAGEMENT
2.3
V
2.15
2.5
V
2.35
2.7
V
3.8
V
30
mA
V_SYS
Typical system regulation voltage
I_(SYS) = 0 A, V_BAT> V_SYS(MIN), BATFET Disabled
(REG09[5]=1)
V_BAT+
50 mV
V
Isys = 0 A, V_BAT< V_SYS(MIN), BATFET Disabled
(REG09[5]=1)
V_BAT +
150 mV
V
V_SYS(MIN)
V_SYS(MAX)
R_ON(RBFET)
R_ON(HSFET)
R_ON(LSFET)
V_(FWD)
V_BAT(GD)
V_{BAT(GD_HYST)}
Minimum DC system voltage output
Maximum DC system voltage output
Top reverse blocking MOSFET(RBFET) on-resistance
between VBUS and PMID
Top switching MOSFET (HSFET) on-resistance between PMID
and SW
Bottom switching MOSFET (LSFET) on-resistance between
SW and GND
BATFET forward voltage in supplement mode
V_BAT< V_SYS(MIN), SYS_MIN = 3.5 V
(REG03[3:1]=101), I_SYS= 0 A
V_BAT = 4.35 V, SYS_MIN = 3.5V
(REG03[3:1]=101), I_SYS= 0 A
T_J = –40°C to +85°C
T_J = –40°C to +125°C
T_J = –40°C to +85°C
T_J = –40°C to +125°C
T_J = –40°C to +85°C
T_J = –40°C to +125°C
BAT discharge current 10 mA
Battery good comparator rising threshold
Battery good comparator falling threshold
V_BAT rising
V_BAT falling
3.50
3.65
V
4.40
4.42
V
27
27
27
27
16
16
30
3.4
3.55
100
38
mΩ
44
mΩ
39
mΩ
47
mΩ
24
mΩ
28
mΩ
mV
3.7
V
mV
8
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