BQ25890H Datasheet, PDF (11/66 Pages) Texas Instruments – I2C Controlled Single Cell 5-A Fast Charger

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BQ25890H
SLUSCC5 – SEPTEMBER 2016
Electrical Characteristics (continued)
V_{VBUS_UVLOZ} < V_VBUS < V_ACOV and V_VBUS > V_BAT + V_SLEEP, T_J = –40°C to +125°C and T_J = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
BAT OVER-VOLTAGE/CURRENT PROTECTION
V_BAT(OVP)
Battery over-voltage threshold
V_{BAT(OVP_HYST)}
Battery over-voltage hysteresis
I_{BAT(FET_OCP)}
System over-current threshold
THERMAL REGULATION AND THERMAL SHUTDOWN
V_BAT rising, as percentage of V_BAT(REG)
104%
V_BAT falling, as percentage of V_BAT(REG)
2%
9
A
T_REG
Junction temperature regulation accuracy
T_SHUT
Thermal shutdown rising temperature
T_SHUT(HYS)
Thermal shutdown hysteresis
JEITA THERMISTOR COMPARATOR (BUCK MODE)
REG08[1:0] = 11
Temperature rising
Temperature falling
120
°C
160
°C
30
°C
V_(T1)
T1 (0°C) threshold, charge suspended T1 below this
temperature.
As percentage to V_(REGN)
72.75% 73.25% 73.75%
V_{(T1_HYS)}
Charge back to ICHG/2 (REG04[6:0]) and VREG (REG06[7:2])
above this temperature.
As percentage to V_(REGN)
1.4%
V_(T2)
T2 (10°C) threshold, charge back to ICHG/2 (REG04[6:0]) and
VREG (REG06[7:2]) below this temperature.
As percentage to V_(REGN)
67.75% 68.25% 68.75%
V_{(T2_HYS)}
Charge back to ICHG (REG04[6:0]) and VREG (REG06[7:2])
above this temperature.
As percentage to V_(REGN)
1.4%
V_(T3)
T3 (45°C) threshold, charge back to ICHG (REG04[6:0]) and
VREG-200 mV (REG06[7:2]) above this temperature.
As percentage to V_(REGN)
44.25v 44.75% 45.25%
V_{(T3_HYS)}
Charge back to ICHG (REG04[6:0]) and VREG (REG06[7:2])
below this temperature.
As percentage to V_(REGN)
1%
V_(T5)
T5 (60°C) threshold, charge suspended above this
temperature.
As percentage to V_(REGN)
33.875% 34.375% 34.875%
V_{(T5_HYS)}
Charge back to ICHG (REG04[6:0]) and VREG-200 mV
(REG06[7:2]) below this temperature.
As percentage to V_(REGN)
1.25%
COLD/HOT THERMISTOR COMPARATOR (BOOST MODE)
V_(BCOLD1)
Cold temperature threshold 1, TS pin voltage rising threshold
As percentage to V_REGN REG01[5] = 1
(Approximately –20°C w/ 103AT)
79.5%
80%
80.5%
V_{(BCOLD1_HYS)}
V_(BHOT2)
Cold temperature threshold 1, TS pin voltage falling threshold
Hot temperature threshold 2, TS pin voltage falling threshold
As percentage to V_REGN REG01[5] = 1
As percentage to V_REGN REG01[7:6] = 10
(Approx. 65°C w/ 103AT)
30.75%
1%
31.25%
31.75%
V_{(BHOT2_HYS)}
Hot temperature threshold 2, TS pin voltage rising threshold
As percentage to V_REGN REG01[7:6] =10
3%
PWM
F_SW
PWM switching frequency, and digital clock
D_MAX
Maximum PWM duty cycle
BOOST MODE OPERATION
Oscillator frequency
1.32
1.68 MHz
97%
V_{(OTG_REG_RANGE)}
V_{(OTG_REG_STEP)}
V_{(OTG_REG_ACC)}
Typical boost mode regulation voltage range
Typical boost mode regulation voltage step
Boost mode regulation voltage accuracy
I(VBUS) = 0 A, BOOSTV=4.998V
(REG0A[7:4] = 0111)
4.55
–3%
5.55
V
64
mV
3%
V_{(OTG_BAT1)}
V_{(OTG_BAT2)}
V_{(OTG_BAT_EN)}
Minimum battery voltage to exit boost mode
Minimum battery voltage to exit boost mode
Minimum battery voltage to enter boost mode
BAT falling, MIN_VBAT_SEL=0
BAT falling, MIN_VBAT_SEL=1
BAT rising, MIN_VBAT_SEL=0
BAT rising, MIN_VBAT_SEL=1
2.7
2.9
V
2.4
2.6
V
2.9
3.1
V
2.7
2.9
V
I_(OTG)
I_{(OTG_OCP_ACC)}
V_{(OTG_OVP)}
Typical boost mode output current range
Boost mode RBFET over-current protection accuracy
Boost mode over-voltage threshold
BOOST_LIM =1.2 A (REG0A[2:0]=010)
Rising threshold
0.5
2.45
A
1.2
1.65
A
5.8
6
V
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