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| BQ25120_16 Datasheet, PDF (10/68 Pages) Texas Instruments – Highly Integrated Battery Charge Management Solution | |||
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BQ25120, BQ25121
SLUSBZ9B â AUGUST 2015 â REVISED MAY 2016
www.ti.com
Electrical Characteristics (continued)
Circuit of , V(UVLO) < VIN < V(OCP) and VIN > V(BAT) + V(SLP), TJ = â40 to 85°C and TJ = 25°C for typical values (unless otherwise
noted)
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
R(DSCH_LSL
DO)
I(OCL_LDO)
MOSFET on-resistance
for LS/LDO discharge
Output Current Limit â
LDO
1.7V < V(VINLS) < 6.6 V, ILOAD = â10 mA
VLS/LDO = 0.9 x VLS/LDO(NOM)
30
Ω
275
365
450
mA
I(LS/LDO)
IIN(LDO)
Output Current
Quiescent current for
VINLS in LDO mode
OFF-state supply current
V(VINLS) = 3.6 V, VLSLDO = 3.3 V
V(VINLS) = 3.3 V, VLSLDO = 0.8 V
V(VINLS) = 2.2 V, VLSLDO = 0.8 V
100
mA
100
mA
10
mA
0.9
µA
0.25
µA
VIH(LSCTRL)
High-level input voltage
for LSCTRL
VIL(LSCTRL)
Low-level input voltage
for LSCTRL
PUSHBUTTON TIMER (MR)
1.15 V > V(VINLS) > 6.6 V
1.15 V > V(VINLS) > 6.6 V
0.75 x
V(SYS)
6.6
V
0.25 x
V(SYS)
V
VIL
Low-level input voltage
RPU
Internal pull-up resistance
VBAT MONITOR
0.3
V
120
kΩ
VBMON
Battery Voltage Monitor
Accuracy
V(BAT) Falling - Including 2% increment
â3.5
3.5
%V(BATREG)
BATTERY-PACK NTC MONITOR
VHOT
High temperature
threshold
VTS falling, 1% VIN Hysteresis
bq25120
14.5
bq25121
15
15.2
%VIN
VWARM
Warm temperature
threshold
VTS falling, 1% VIN Hysteresis
bq25120
20.1
bq25121
20.2
20.5
20.6
20.8
20.9
%VIN
VCOOL
Cool temperature
threshold
VTS rising, 1% VIN Hysteresis
bq25120
35.4
bq25121
35.5
36
36.1
36.4
36.5
%VIN
VCOLD
Low temperature
threshold
VTS rising, 1% VIN Hysteresis
bq25120
39.3
bq25121
39.5
39.8
40
40.2
40.3
%VIN
TSOFF
TS Disable threshold
VTS rising, 2% VIN Hysteresis
bq25120
55
bq25121
60
%VIN
PROTECTION
V(UVLO)
IC active threshold
voltage
VIN rising
3.4
3.6
3.8
V
VUVLO(HYS)
V(BUVLO)
IC active hysteresis
Battery Undervoltage
Lockout threshold Range
Default Battery
Undervoltage Lockout
Accuracy
VIN falling from above VUVLO
Programmable Range for V(BUVLO) VBAT falling, 200 mV
Hysteresis
V(BAT) falling
150
mV
2.2
3.0
V
â2.5%
2.5%
V(BATSHORT
)
V(BATSHORT
_HYS)
I(BATSHORT)
Battery short circuit
threshold
Hysteresis for V(BATSHORT)
Battery short circuit
charge current
Battery voltage falling
2
V
100
mV
I(PRETERM)
mA
V(SLP)
V(SLP_HYS)
Sleep entry threshold,
VIN â V(BAT)
Sleep-mode exit
hysteresis
2 V < VBAT < V(BATREG), VIN falling
VIN rising above V(SLP)
65
120
mV
40
65
100
mV
VOVP
Maximum Input Supply
OVP threshold voltage
VIN rising, 100 mV hysteresis
5.35
5.55
5.75
V
tDGL_OVP
Deglitch time, VIN OVP
falling
VIN falling below VOVP, 1V/us
32
ms
TSHTDWN Thermal trip
VIN > VUVLO
114
°C
10
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Product Folder Links: BQ25120 BQ25121
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