SMJ44C256 Datasheet, PDF (6/21 Pages) Texas Instruments – 262144 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY

SMJ44C256
262144 BY 4-BIT
DYNAMIC RANDOM-ACCESS MEMORY
SGMS034C – MAY 1989 – REVISED JUNE 1995
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VOH
High-level output
voltage
Low-level output
VOL _voltage
II
Input current
(leakage)
Output current
IO
(leakage)
Read- or
ICC1 write-cycle
current
ICC2 Standby current
ICC3
Average refresh
current
(RAS only, or
CBR)
ICC4
Average page
current
IOH = – 5 mA
IOL = 4.2 mA
VCC = 5 V, VI = 0 V to 6.5 V,
All other pins = 0 V to VCC
VCC = 5.5 V, VO = 0 to VCC,
CAS high
VCC = 5.5 V,
tc(rdW) = minimum
After 1 memory cycle,
RAS and CAS high,
VIH = 2.4 V
VCC = 5.5 V,
tc(rdW) = minimum,
RAS cycling,
CAS high (RAS only),
RAS low after CAS low (CBR)
VCC = 5.5 V, tc(P) = minimum,
RAS low,
CAS cycling
’44C256-80 ’44C256-10 ’44C256-12 ’44C256-15
UNIT
MIN MAX MIN MAX MIN MAX MIN MAX
2.4
2.4
2.4
2.4
V
0.4
0.4
0.4
0.4 V
± 10
± 10
± 10
± 10 µA
± 10
± 10
± 10
± 10 µA
80
70
60
55 mA
3
3
3
3 mA
75
65
55
50 mA
50
45
35
30 mA
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz (see Note 3)
PARAMETER
HL / JD / FQ
MIN MAX
HJ
MIN MAX
HK
MIN MAX
SV
UNIT
MIN MAX
Ci(A) Input capacitance, address inputs
6
7
8
9 pF
Ci(RC) Input capacitance, strobe inputs
7
7
8
8 pF
Ci(W) Input capacitance, write-enable input
7
7
7
7 pF
CO
Output capacitance
7
9
10
8 pF
NOTE 3: Capacitance is sampled only at initial design and after any major change. Samples are tested at 0 V and 25°C with a 1-MHz signal
applied to the pin under test. All other pins are open.
6
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