THS7327 Datasheet, PDF (2/26 Pages) Texas Instruments – 3-Channel RGBHV Video Buffer with I2C Control, Selectable Filters, Monitor Pass-Thru,2:1 Input MUX, and Selectable Input Bias Modes

THS7327
SLOS502 – SEPTEMBER 2006
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
DESCRIPTION (CONTINUED)
Each channel of the THS7327 is individually I²C configurable for all functions including controlling the 2:1 input
MUX. Its rail-to-rail output stage allows for both ac and dc coupling applications. The monitor pass-thru path
allows for passing the input signal, with no filtering, on to other systems. This path has a 6-dB Gain, 500-MHz
bandwidth, 1300V/µs slewrate, SAG correction capability, and a high output impedance while disabled to add to
the flexibility of the THS7327.
As part of the THS7327’s flexibility, the input can be selected for ac or dc coupled inputs. The ac-coupled modes
include a sync-tip clamp option for CVBS/Y’/G’B’R’ with sync or a fixed bias for the C’/P’_B/P’_R/R’G’B’ channels
without sync. The dc input options include a dc input or a dc+Offset shift to allow for a full sync dynamic range at
the output with 0-V input.
The THS7327 is available in a RoHS Compliant TQFP package.
PACKAGED DEVICES⁽¹⁾
THS7327PHP
THS7327PHPR
PACKAGING/ORDERING INFORMATION
PACKAGE TYPE
HTQFP-48 PowerPAD™
TRANSPORT MEDIA, QUANTITY
Tray 250
Tape and reel, 1000
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at www.ti.com
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)⁽¹⁾
V_SS Supply voltage, V_S+ to GND
V_I
Input voltage
I_O
Output current
Continuous power dissipation
T_J
Maximum junction temperature, any condition⁽²⁾
T_J
Maximum junction temperature, continuous operation, long term reliability⁽³⁾
T_stg Storage temperature range
HBM
ESD ratings CDM
MM
UNIT
5.5 V
–0.4 V to V_S+
±100 mA
See Dissipation Rating Table
150°C
125°C
–65°C to 150°C
1500 V
1500 V
100 V
(1) Stresses above those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied Exposure to absolute maximum rated conditions for extended periods may degrade device reliability.
(2) The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process.
(3) The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this
temperature may result in reduced reliability and/or lifetime of the device.
2
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