CD00001237 Datasheet, PDF (78/105 Pages) STMicroelectronics – 8-bit MCUs with A/D converter

ST6215C ST6225C
11.7 EMC CHARACTERISTICS
Susceptibility tests are performed on a sample ba-
sis during product characterization.
11.7.1 Functional EMS
(Electro Magnetic Susceptibility)
Based on a simple running application on the
product (toggling 2 LEDs through I/O ports), the
product is stressed by two electro magnetic events
until a failure occurs (indicated by the LEDs).
■ ESD: Electro-Static Discharge (positive and
negative) is applied on all pins of the device until
a functional disturbance occurs. This test
conforms with the IEC 1000-4-2 standard.
■ FTB: A Burst of Fast Transient voltage (positive
and negative) is applied to V_DD and V_SS through
a 100pF capacitor, until a functional disturbance
occurs. This test conforms with the IEC 1000-4-
4 standard.
A device reset allows normal operations to be re-
sumed.
Symbol
V_FESD
V_FFTB
Parameter
Conditions
Voltage limits to be applied on any I/O pin V_DD=5V, T_A=+25°C, f_OSC=8MHz
to induce a functional disturbance
conforms to IEC 1000-4-2
Fast transient voltage burst limits to be ap-
plied through 100pF on V_DD and V_DD pins
to induce a functional disturbance
V_DD=5V, T_A=+25°C, f_OSC=8MHz
conforms to IEC 1000-4-4
Neg ¹⁾ Pos ¹⁾
-2
2
-2.5
3
Unit
kV
Notes:
1. Data based on characterization results, not tested in production.
2. The suggested 10 µF and 0.1 µF decoupling capacitors on the power supply lines are proposed as a good price vs.
EMC performance tradeoff. They have to be put as close as possible to the device power supply pins. Other EMC rec-
ommendations are given in other sections (I/Os, RESET, OSCx pin characteristics).
Figure 56. EMC Recommended Star Network Power Supply Connection ²⁾
POWER
SUPPLY
SOURCE
V_DD
10 µF 0.1 µF
ST6
DIGITAL NOISE
FILTERING
(close to the MCU)
V_DD
V_SS
ST62XX
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