MB84VD23481FJ-70 Datasheet, PDF (51/55 Pages) SPANSION – 64 M (×16) FLASH MEMORY & 32 M (×16) Mobile FCRAM

MB84VD23481FJ-70
3. DATA RETENTION Low VCCr Characteristics (FCRAM)
Parameter
Symbol
Test Conditions
VCCr Data Retention Supply
Voltage
VCCr Data Retention Supply
Current
VDR
CE1r = CE2r ≥ VCCr – 0.2 V or
CE1r = CE2r = VIH
2.1 V ≤ VCCr ≤ 2.7 V,
IDR VIN = VIH* or VIL,
CE1r = CE2r = VIH*, IOUT = 0 mA
2.1 V ≤ VCCr ≤ 2.7 V,
IDR1 VIN ≤ 0.2 V or VIN ≥ VCCr – 0.2 V,
CE1r = CE2r ≥ VCCr – 0.2 V, IOUT = 0 mA
Data Retention Setup Time
tDRS 2.7 V ≤ VCCr ≤ 3.1 V at data retention entry
Value
Unit
Min Max
2.1 3.1 V
— 1.5 mA
— 100 µA
0 — ns
Data Retention Recovery Time
tDRR 2.7 V ≤ VCCr ≤ 3.1 V after data retention
200 — ns
VCCr Voltage Transition Time
∆V/∆t
—
* : 2.0 V ≤ VIH ≤ VCCr + 0.3 V
• Data Retention Timing
3.1 V
2.7 V
VCCr
tDRS
∆V/∆t
tDRR
∆V/∆t
CE2r
2.1 V
CE1r
VCCr-0.2 V or VIH(* Min
0.2 — V/µs
0.4 V
VSS
Data Retention Mode
Data bus must be in High-Z at data retention entry.
* : 2.0 V ≤ VIH ≤ VCCr + 0.3 V
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