MB84VD23481FJ-70 Datasheet, PDF (1/55 Pages) SPANSION – 64 M (×16) FLASH MEMORY & 32 M (×16) Mobile FCRAM

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-50310-2E
Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
CMOS
64 M (×16) FLASH MEMORY &
32 M (×16) Mobile FCRAM^TM
MB84VD23481FJ-70
s FEATURES
• Power Supply Voltage of 2.7 V to 3.1 V
• High Performance
70 ns maximum access time (Flash)
70 ns maximum access time (FCRAM)
• Operating Temperature
−30 °C to +85 °C
• Package 65-ball FBGA
s PRODUCT LINE-UP
Power Supply Voltage ( V )
Max Address Access Time (ns)
Flash Memory
VCCf* = 2.7 V to 3.1 V
70
Max CE Access Time (ns)
70
Max OE Access Time (ns)
30
*: Both VCCf and VCCr must be the same level when either part is being accessed.
s PACKAGE
65-ball plastic FBGA
(Continued)
FCRAM
VCCr* = 2.7 V to 3.1 V
65
65
40
(BGA-65P-M01)