MB84VD23481FJ-70 Datasheet, PDF (50/55 Pages) SPANSION – 64 M (×16) FLASH MEMORY & 32 M (×16) Mobile FCRAM

MB84VD23481FJ-70
• Standby Entry Timing after Read or Write (FCRAM)
CE1r
OE
tCHOX
tCHWX
WE
Active (Read)
Standby
Active (Write)
Standby
Note : Both tCHOX and tCHWX define the earliest entry timing for Standby mode. If either of timing is not satisfied, it
takes tRC (Min) period from either last address transition of A1 and A0, or CE1r Low to High transition.
s ERASE AND PROGRAMMING PERFORMANCE (Flash)
Parameter
Value
Unit
Min
Typ
Max
Remarks
Sector Erase Time
—
0.5
2
s Excludes programming time prior to erasure
Word Programming Time —
6
100 µs Excludes system-level overhead
Chip Programming Time
—
25.2
95
s Excludes system-level overhead
Erase/Program Cycle
100,000 —
— cycle
Note : Typical Erase conditions TA = +25°C, VCCf_1 & VCCf_2 = 2.9 V
Typical Program conditions TA = +25°C, VCCf_1 & VCCf_2 = 2.9 V
Data= Checker
50