MB84VD23481FJ-70 Datasheet, PDF (16/55 Pages) SPANSION – 64 M (×16) FLASH MEMORY & 32 M (×16) Mobile FCRAM

MB84VD23481FJ-70
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*1: This command is valid during Fast Mode.
*2: This command is valid while RESET = VID.
*3: This command is valid during HiddenROM mode.
*4: The data “00h” is also acceptable.
*5: RA = Address of the memory location to be read
*6: PA = Address of the memory location to be programmed
Addresses are latched on the falling edge of the write pulse.
*7: SA = Address of the sector to be erased. The combination of A21, A20, A19, A18, A17, A16, A15, A14, A13, and
A12 will uniquely select any sector.
*8: BA = Bank Address (A21, A20, A19)
*9: RD = Data read from location RA during read operation.
*10:PD = Data to be programmed at location PA. Data is latched on the rising edge of write pulse.
*11:SPA = Sector group address to be protected. Set sector group address and (A6, A3, A2, A1, A0) =
(0, 0, 0, 1, 0).
*12:SD = Sector group protection verify data. Output 01h at protected sector group addresses and output
00h at unprotected sector group addresses.
*13:HRA = Address of the HiddenROM area: 000000h to 00007Fh
*14: HRBA = Bank Address of the HiddenROM area (A21 = A20 = A19 = VIL)
Notes : • Address bits A21 to A11 = X = “H” or “L” for all address commands except or Program Address (PA),
Sector Address (SA), and Bank Address (BA), and Sector Group Address (SPA).
• Bus operations are defined in “s DEVICE BUS OPERATION”.
• The system should generate the following address patterns: 555h or 2AAh to addresses A10 to A0
• Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
• The command combinations not described in this table are illegal.
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