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MB84VD23481FJ-70 Datasheet, PDF (3/55 Pages) SPANSION – 64 M (×16) FLASH MEMORY & 32 M (×16) Mobile FCRAM
MB84VD23481FJ-70
(Continued)
• FCRAMTM *3
• Power Dissipation
Operating : 25 mA Max
Standby : 100 µA Max
• Power Down Mode
Sleep : 10 µA Max
NAP
: 60 µA Max
8M Partial : 70 µA Max
• Power Down Control by CE2r
• Byte Write Control: LB(DQ7 to DQ0), UB(DQ15 to DQ8)
• 8 words Address Access Capability
*1 : FlexBankTM is a trademark of Fujitsu Limited, Japan.
*2 : Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
*3 : FCRAMTM is a trademark of Fujitsu Limited, Japan.
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