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MB84VD23481FJ-70 Datasheet, PDF (19/55 Pages) SPANSION – 64 M (×16) FLASH MEMORY & 32 M (×16) Mobile FCRAM | |||
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MB84VD23481FJ-70
(Continued)
Parameter
Symbol
Test Conditions
Input Low Level
VIL
â
Input High Level
VIH
â
Voltage for Autoselect and
Sector Protection (RESET)*7
Voltage for WP/ACC Sector
Protection/Unprotection and
Program Acceleration
FCRAM Output Low Level
FCRAM Output High Level
Flash Output Low Level
Flash Output High Level
Flash Low VCC Lock-Out
Voltage
VID
â
VACC
â
VOL VCCr = VCCr Min, IOL = 1.0 mA
VOH VCCr = VCCr Min, IOH = â0.5 mA
VOL VCCf = VCCf Min, IOL = 4.0 mA
VOH VCCf = VCCf Min, IOH = â0.1 mA
VLKO
â
Flash
FCRAM
Min
â0.3
2.0
2.2
Value
Unit
Typ Max
â 0.5 V
VCCf+0.3
â
V
VCCr+0.3
11.5 â 12.5 V
8.5 9.0 9.5 V
â
â
2.2
â
â
â
VCCfâ0.4 â
0.4 V
âV
0.45 V
âV
2.3 2.4 2.5 V
*1 : All voltage are referenced to VSS.
*2 : FCRAM DC characteristics are measured after following POWER-UP timing.
*3 : IOUT depends on the output load conditions.
*4 : The ICC current listed includes both the DC operating current and the frequency dependent component.
*5 : ICC active while Embedded Algorithm (program or erase) is in progress.
*6 : Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
*7 : Applicable for only VCC applying.
*8 : Embedded Alogorithm (program or erase) is in progress. (@5MHz)
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