MB84VD23481FJ-70 Datasheet, PDF (48/55 Pages) SPANSION – 64 M (×16) FLASH MEMORY & 32 M (×16) Mobile FCRAM

MB84VD23481FJ-70
• READ(OE Control) / WRITE(WE Control) Timing #2-2
Address
CE1r
Low
WE
UB, LB
OE
DQ
tRC
Read Address Valid
tASO
tWR
tOEH
tBH
tBSO
tOE
tDH
tOLZ
tOHAH
Write Address
tAS
tOHBH
tBS
tOES
tOHZ
tOH
Write Data Input
Read Data Output
Note : CE1r can be tied to Low for WE and OE controlled operation.
When CE1r is tied to Low, output is exclusively controlled by OE.
• POWER DOWN PROGRAM Timing (FCRAM)
CE1r
tEPS
PE
Address
(A20 to A16)
tEP
tEPH
tEAS
tEAH
Key
Note : CE2r must be High for Power Down Programming.
Any other inputs not specified above can be either High or Low.
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