MB84VD23481FJ-70 Datasheet, PDF (18/55 Pages) SPANSION – 64 M (×16) FLASH MEMORY & 32 M (×16) Mobile FCRAM

MB84VD23481FJ-70
s ELECTRICAL CHARACTERISTICS
1. DC Characteristics*^1,*^2,*³
Parameter
Symbol
Test Conditions
Input Leakage Current
Output Leakage Current
RESET Inputs Leakage
Current
Flash VCC Active Current
(Read) *⁴
Flash VCC Active Current
(Program/Erase) *⁵
Flash VCC Active Current
(Read-While-Program) *⁸
Flash VCC Active Current
(Read-While-Erase) *⁸
Flash VCC Active Current
(Erase-Suspend-Program)
WP/ACC Acceleration
Program Current
FCRAM VCC Active Current
Flash VCC Standby Current
Flash VCC Standby Current
(RESET)
Flash VCC Current
(Automatic Sleep Mode)*⁶
FCRAM VCC Standby
Current
FCRAM VCC Power Down
Current
ILI VIN = VSS to VCCf, VCCr
ILO VOUT = VSS to VCCf, VCCr
ILIT
VCCf = VCCf Max,
RESET = 12.5 V
ICC1f CEf = VIL, OE = VIH
ICC2f CEf = VIL, OE = VIH
tCYCLE = 5 MHz
tCYCLE = 1 MHz
ICC3f CEf = VIL, OE = VIH
ICC4f CEf = VIL, OE = VIH
ICC5f CEf = VIL, OE = VIH
IACC
ICC1r
ISB1f
ISB2f
ISB3f
ISB1r
IPDSr
IPDNr
IPD8r
VCCf = VCCf Max,
WP/ACC = VACC Max
VCCr = VCCr Max,
CE1r = VIL, CE2r = VIH,
VIN = VIH or VIL,
IOUT = 0 mA
tRC / tWC = Min
tRC / tWC = 1 µs
VCCf = VCCf Max, CEf = VCCf ± 0.3 V
RESET = VCCf ± 0.3 V,
WP/ACC = VCCf ± 0.3 V
VCCf = VCCf Max, RESET = VSS ± 0.3 V,
WP/ACC = VCCf ± 0.3 V
VCCf = VCCf Max, CEf = VSS ± 0.3 V
RESET = VCCf ± 0.3 V,
WP/ACC = VCCf ± 0.3 V
VIN = VCCf ± 0.3 V or VSS ± 0.3 V
VCCr = VCCr Max,CE1r > VCCr – 0.2 V,
CE2r > VCCr– 0.2 V,
VIN < 0.2 V or VCCr – 0.2 V
VCCr = VCCr Max,
CE1r > VCCr – 0.2 V,
CE2r < 0.2 V
Sleep
NAP
8M
Partial
Value
Unit
Min Typ Max
–1.0 — +1.0 µA
–1.0 — +1.0 µA
—
—
35 µA
—
—
18 mA
—
—
4 mA
—
—
30 mA
—
—
48 mA
—
—
48 mA
—
—
30 mA
—
—
20 mA
—
—
25
mA
—
—
3
—
1
5 µA
—
1
5 µA
—
1
5 µA
—
— 100 µA
—
—
10 µA
—
—
60 µA
—
—
70 µA
(Continued)
18