K4R271669B Datasheet, PDF (4/20 Pages) Samsung semiconductor – 256K x 16/18 bit x 32s banks Direct RDRAMTM

K4R271669B/K4R441869B
Direct RDRAM^™
Pinouts and Definitions
Center-Bonded Devices
These tables shows the pin assignments of the center-bonded
RDRAM package. The top table is for the normal package,
and bottom table is for the mirrored package. The mechan-
ical dimensions of this package are shown in a later section.
Refer to Section "Center-Bonded uBGA Package" on page
18.
Table 1-1: a. Center-Bonded Device (top view for normal package)
b. Top marking example of normal package
12
GND
VDD
VDD
GND
11
10
DQA7
DQA4
CFM
CFMN
RQ5
RQ3
DQB0 DQB4
DQB7
9
GND
VDD
GND
GNDa
VDD
GND
VDD
VDD
GND
8
CMD
DQA5 DQA2 VDDa
RQ6
RQ2
DQB1 DQB5
SIO1
7
6
5
SCK
DQA6 DQA1 VREF
RQ7
RQ1
DQB2 DQB6
SIO0
4
VCMOS GND
VDD
GND
GND
VDD
GND
GND VCMOS
3
DQA8*
DQA3 DQA0 CTMN
CTM
RQ4
RQ0
DQB3 DQB8*
2
1
GND
VDD
VDD
GND
ROW
A
B
C
D
E
F
G
H
J
COL
Table 1-2: a. Center-Bonded Device (top view for mirrored package)
SAMSUNG 050
K4Rxxxx69B-Nxxx
For normal package, pin #1(ROW 1, COL A) is
located at the A1 position on the top side and the A1
• ^{position is marked by the marker “ “.}
Top View
Chip
12
11
10
9
8
7
6
5
4
3
2
1
ROW
COL
GND
VDD
DQA8*
VCMOS
SCK
DQA3
GND
DQA6
DQA0
VDD
DQA1
CTMN
GND
VREF
CTM
GND
RQ7
CMD
GND
DQA7
DQA5 DQA2 VDDa
VDD
GND
GNDa
DQA4
CFM
CFMN
RQ6
VDD
RQ5
GND
VDD
A
B
C
D
E
VDD
GND
RQ4
VDD
RQ1
RQ0
GND
DQB2
DQB3
GND
DQB6
DQB8*
VCMOS
SIO0
RQ2
GND
RQ3
DQB1 DQB5
VDD
VDD
DQB0 DQB4
SIO1
GND
DQB7
VDD
GND
F
G
H
J
* DQA8/DQB8 are just used for 144Mb RDRAM.
These two pins are NC(No Connection) in 128Mb
RDRAM.
b. Top marking example of mirrored package
SAMSUNG 050
K4Rxxxx69B-Mxxx
M
For mirrored package, pin #1(ROW 1, COL A) is
located at the A1 postion on the top side and the A1
position is marked by the alphabet “M“.
Page 2
Version 1.11 Oct. 2000