K4R271669B Datasheet, PDF (3/20 Pages) Samsung semiconductor – 256K x 16/18 bit x 32s banks Direct RDRAMTM

K4R271669B/K4R441869B
Direct RDRAM^™
Overview
The Rambus Direct RDRAM™ is a general purpose high-
performance memory device suitable for use in a broad
range of applications including computer memory, graphics,
video, and any other application where high bandwidth and
low latency are required.
The 128/144-Mbit Direct Rambus DRAMs (RDRAM®) are
extremely high-speed CMOS DRAMs organized as 8M
words by 16 or 18 bits. The use of Rambus Signaling Level
(RSL) technology permits 600MHz to 800MHz transfer
rates while using conventional system and board design
technologies. Direct RDRAM devices are capable of
sustained data transfers at 1.25 ns per two bytes (10ns per
sixteen bytes).
The architecture of the Direct RDRAMs allows the highest
sustained bandwidth for multiple, simultaneous randomly
addressed memory transactions. The separate control and
data buses with independent row and column control yield
over 95% bus efficiency. The Direct RDRAM's 32 banks
support up to four simultaneous transactions.
System oriented features for mobile, graphics and large
memory systems include power management, byte masking,
and x18 organization. The two data bits in the x18 organiza-
tion are general and can be used for additional storage and
bandwidth or for error correction.
Features
♦ Highest sustained bandwidth per DRAM device
- 1.6GB/s sustained data transfer rate
- Separate control and data buses for maximized
efficiency
- Separate row and column control buses for
easy scheduling and highest performance
- 32 banks: four transactions can take place simul-
taneously at full bandwidth data rates
♦ Low latency features
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions
♦ Advanced power management:
- Direct RDRAM operates from a 2.5 volt supply
- Multiple low power states allows flexibility in power
consumption versus time to transition to active state
- Power-down self-refresh
♦ Organization: 1Kbyte pages and 32 banks, x 16/18
- x18 organization allows ECC configurations or
increased storage/bandwidth
- x16 organization for low cost applications
♦ Uses Rambus Signaling Level (RSL) for up to 800MHz
operation
SAMSUNG 050
SAMSUNG 050
K4Rxxxx69B-Nxxx K4Rxxxx69B-Mxxx
a. Normal Package
M
b. Mirrored Package
Figure 1: Direct RDRAM CSP Package
The 128/144-Mbit Direct RDRAMs are offered in a CSP
horizontal package suitable for desktop as well as low-
profile add-in card and mobile applications.
Key Timing Parameters/Part Numbers
Organization
Bin
256Kx16x32s^a -CK8
-CK7
-CG6
256Kx18x32s^a -CK8
-CK7
-CG6
Speed
I/O t_RAC (Row
Freq. Access
MHz Time) ns
Part Number
800
45
K4R271669B-N^b(M)C^cK8
711
45
K4R271669B-N(M)CK7
600
53.3
K4R271669B-N(M)CG6
800
45
K4R441869B-N(M)CK8
711
45
K4R441869B-N(M)CK7
600
53.3
K4R441869B-N(M)CG6
a.“32s” - 32 banks which use a “split” bank architecture.
b.“N” - normal package, “M” - mirrored package.
c.“C” - RDRAM core uses normal power self refresh.
Page 1
Version 1.11 Oct. 2000