K4R271669B Datasheet, PDF (19/20 Pages) Samsung semiconductor – 256K x 16/18 bit x 32s banks Direct RDRAMTM

K4R271669B/K4R441869B
Direct RDRAM^™
Capacitance and Inductance
Symbol
L_I
L₁₂
∆L_I
C_I
C₁₂
∆C_I
R_I
Table 17: RSL Pin Parasitics
Parameter and Conditions - RSL pins
Min
RSL effective input inductance
Mutual inductance between any DQA or DQB RSL signals.
Mutual inductance between any ROW or COL RSL signals.
Difference in L_I value between any RSL pins of a single device.
-
RSL effective input capacitance^a
800
2.0
711
2.0
600
2.0
Mutual capacitance between any RSL signals.
-
Difference in C_I value between average of {CTM, CTMN, CFM,
-
CFMN} and any RSL pins of a single device.
RSL effective input resistance
4
Max
4.0
0.2
0.6
1.8
2.4
2.4
2.6
0.1
0.06
15
Unit
Figure
nH
Figure 62
nH
Figure 62
nH
nH
Figure 62
pF
Figure 62
pF
Figure 62
pF
Figure 62
Ω
Figure 62
a. This value is a combination of the device IO circuitry and package capacitances measured at VDD=2.5V and f=400MHz with pin biased at 1.4V.
Table 18: CMOS Pin Parasitics
Symbol
L_{I ,CMOS}
C_{I ,CMOS}
C_{I ,CMOS,SIO}
Parameter and Conditions - CMOS pins
CMOS effective input inductance
CMOS effective input capacitance (SCK,CMD)^a
CMOS effective input capacitance (SIO1, SIO0)^a
Min
Max
Unit
Figure
8.0
nH
Figure 62
1.7
2.1
pF
-
7.0
pF
a. This value is a combination of the device IO circuitry and package capacitances.
Page 17
Version 1.11 Oct. 2000