K4R271669B Datasheet, PDF (18/20 Pages) Samsung semiconductor – 256K x 16/18 bit x 32s banks Direct RDRAMTM

K4R271669B/K4R441869B
Direct RDRAM^™
Absolute Maximum Ratings
Table 14: Absolute Maximum Ratings
Symbol
V_I,ABS
V_DD,ABS, V_DDA,ABS
T_STORE
Parameter
Voltage applied to any RSL or CMOS pin with respect to Gnd
Voltage on VDD and VDDA with respect to Gnd
Storage temperature
Min
- 0.3
- 0.5
- 50
Max
V_DD+0.3
V_DD+1.0
100
Unit
V
V
°C
I_DD - Supply Current Profile
Table 15: Supply Current Profile
I_DD value
Min
RDRAM Power State and Steady-State Transaction Rates^a
I_DD,PDN
I_DD,NAP
I_DD,STBY
Device in PDN, self-refresh enabled and INIT.LSR=0.
-
Device in NAP.
-
Device in STBY. This is the average for a device in STBY with (1) no
-
packets on the Channel, and (2) with packets sent to other devices.
I_DD,REFRESH Device in STBY and refreshing rows at the t_REF,MAX period.
-
I_DD,ATTN
Device in ATTN. This is the average for a device in ATTN with (1) no
-
packets on the Channel, and (2) with packets sent to other devices.
I_DD,ATTN-W
Device in ATTN. ACT command every 8•t _CYCLE, PRE command
-
every 8•t _CYCLE, WR command every 4•t_CYCLE, and data is 1100..1100
I_DD,ATTN-R
Device in ATTN. ACT command every 8•t _CYCLE, PRE command
-
every 8•t_CYCLE, RD command every 4•t_CYCLE, and data is 1111..1111^c
Max
-45
-800
5000
4
105
105
165
575/
625^b
490/
520
Max
-45
-711
5000
4
100
100
155
525/
580
450/
480
a. CMOS interface consumes power in all power states.
b. x16/x18 RDRAM data width.
c. This does not include the I_OL sink current. The RDRAM dissipates I_OL•V_OL in each output driver when a logic one is driven.
Table 16: Supply Current at Initialization
Symbol
I_DD,PWRUP,D
I_DD,SETR,D
Parameter
I_DD from power -on to SETR
I_DD from SETR to CLRR
Allowed Range of t_CYCLE
3.33ns to 3.83ns
2.50ns to 3.32ns
3.33ns to 3.83ns
2.50ns to 3.32ns
V_DD
V_DD,MIN
Min
-
V_DD,MIN
-
Max
-53.3
-600
5000
4
90
90
140
455/
500
400/
420
Max
150^a
200^b
250^b
332^b
Unit
µA
mA
mA
mA
mA
mA
mA
Unit
mA
mA
Page 16
Version 1.11 Oct. 2000