K4E170811D Datasheet, PDF (4/21 Pages) Samsung semiconductor – 2M x 8Bit CMOS Dynamic RAM with Extended Data Out

K4E170811D, K4E160811D
K4E170812D, K4E160812D
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
ICC7
ICCS
Power
Don′t care
Normal
L
Don′t care
Don′t care
Normal
L
Don′t care
L
L
Speed
-50
-60
Don′t care
-50
-60
-50
-60
Don′t care
-50
-60
Don′t care
Don′t care
K4E170812D
90
80
1
1
90
80
80
70
0.5
200
90
80
250
200
Max
K4E160812D
K4E170811D
110
90
100
80
1
2
1
1
110
90
100
80
90
80
80
70
0.5
1
200
250
110
90
100
80
250
300
200
250
ICC1* : Operating Current (RAS and CAS cycling @tRC=min.)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3* : RAS-only Refresh Current (CAS=VIH, RAS cycling @tRC=min.)
ICC4* : Hyper Page Mode Current (RAS=VIL, CAS, Address cycling @tHPC=min.)
ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=0.2V,
DQ=Don′t care, TRC=31.25us(4K/L-ver), 62.5us(2K/L-ver),
TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=CAS=VIL, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,
DQ0 ~ DQ7=VCC-0.2V, 0.2V or Open
CMOS DRAM
K4E160811D
110
100
2
1
110
100
90
80
1
250
110
100
300
250
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
uA
uA
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one Hyper page mode cycle time, tHPC.