K4E170811D Datasheet, PDF (3/21 Pages) Samsung semiconductor – 2M x 8Bit CMOS Dynamic RAM with Extended Data Out

K4E170811D, K4E160811D
K4E170812D, K4E160812D
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
3.3V
5V
Units
Voltage on any pin relative to VSS
VIN,VOUT
-0.5 to +4.6
-1.0 to +7.0
V
Voltage on VCC supply relative to VSS
Storage Temperature
VCC
-0.5 to +4.6
Tstg
-55 to +150
-1.0 to +7.0
V
-55 to +150
°C
Power Dissipation
Short Circuit Output Current
PD
1
IOS Address
50
1
W
50
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted
to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C)
Parameter
3.3V
5V
Symbol
Min
Typ
Max
Min
Typ
Max
Supply Voltage
VCC
3.0
3.3
3.6
4.5
5.0
5.5
Ground
VSS
0
0
0
0
0
0
Input High Voltage
VIH
2.0
-
VCC+0.3^*1
Input Low Voltage
VIL
-0.3^*2
-
0.8
*1 : VCC+1.3V/15ns(3.3V), VCC+2.0V/20ns(5V), Pulse width is measured at VCC
*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at VSS
2.4
-1.0^*2
-
VCC+1.0^*1
-
0.8
Units
V
V
V
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Max
Parameter
Symbol
Min
Input Leakage Current (Any input 0≤VIN≤VIN+0.3V,
all other input pins not under test=0 Volt)
II(L)
-5
Max
Units
5
uA
3.3V
Output Leakage Current
(Data out is disabled, 0V≤VOUT≤VCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-2mA)
VOH
2.4
-
V
Output Low Voltage Level(IOL=2mA)
VOL
-
0.4
V
Input Leakage Current (Any input 0≤VIN≤VIN+0.5V,
all other input pins not under test=0 Volt)
II(L)
-5
5
uA
Output Leakage Current
5V
(Data out is disabled, 0V≤VOUT≤VCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-5mA)
Output Low Voltage Level(IOL=4.2mA)
VOH
2.4
-
V
VOL
-
0.4
V