 English |
|
|
|
|
|
|
|
| K4E170811D Datasheet, PDF (10/21 Pages) Samsung semiconductor – 2M x 8Bit CMOS Dynamic RAM with Extended Data Out | |||
| |||
| ◁ |
K4E170811D, K4E160811D
K4E170812D, K4E160812D
WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ3(7)
VIH -
VIL -
tRC
tRAS
tCRP
tRCD
tASR
tRAD
tRAH
tASC
ROW
ADDRESS
tCSH
tRSH
tCAS
tCAH
COLUMN
ADDRESS
tRAL
tWCS
tCWL
tRWL
tWCH
tWP
tDS
tDH
DATA-IN
CMOS DRAM
tRP
tCRP
Donâ²t care
Undefined
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese