K4E170811D Datasheet, PDF (2/21 Pages) Samsung semiconductor – 2M x 8Bit CMOS Dynamic RAM with Extended Data Out

K4E170811D, K4E160811D
K4E170812D, K4E160812D
CMOS DRAM
PIN CONFIGURATION (Top Views)
• K4E17(6)0811(2)D-B
VCC 1
DQ0 2
DQ1 3
DQ2 4
DQ3 5
W6
RAS 7
*A11(N.C) 8
A10 9
A0 10
A1 11
A2 12
A3 13
VCC 14
28 VSS
27 DQ7
26 DQ6
25 DQ5
24 DQ4
23 CAS
22 OE
21 A9
20 A8
19 A7
18 A6
17 A5
16 A4
15 VSS
• K4E17(6)0811(2)D-F
VCC 1
DQ0 2
DQ1 3
DQ2 4
DQ3 5
W6
RAS 7
*A11(N.C) 8
A10 9
A0 10
A1 11
A2 12
A3 13
VCC 14
28 VSS
27 DQ7
26 DQ6
25 DQ5
24 DQ4
23 CAS
22 OE
21 A9
20 A8
19 A7
18 A6
17 A5
16 A4
15 VSS
*A11 is N.C for K4E160811(2)D(5V/3.3V, 2K Ref. product)
B : 300mil 28 SOJ
F : 300mil 28 TSOP II
Pin Name
A0 - A11
A0 - A10
DQ0 - 7
VSS
RAS
CAS
W
OE
VCC
N.C
Pin Function
Address Inputs (4K Product)
Address Inputs (2K Product)
Data In/Out
Ground
Row Address Strobe
Column Address Strobe
Read/Write Input
Data Output Enable
Power(+5V)
Power(+3.3V)
No Connection (2K Ref. product)