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| K4E170811D Datasheet, PDF (12/21 Pages) Samsung semiconductor – 2M x 8Bit CMOS Dynamic RAM with Extended Data Out | |||
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K4E170811D, K4E160811D
K4E170812D, K4E160812D
READ - MODIFY - WRITE CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ3(7)
VI/OH -
VI/OL -
tRWC
tRAS
tRP
tCRP
tRCD
tASR
tRAD
tRAH
tASC
tCAH
ROW
ADDR
COLUMN
ADDRESS
tRSH
tCAS
tCSH
tAWD
tCWD
tRWD
tOEA
tRWL
tCWL
tWP
tOLZ
tCLZ
tCAC
tAA
tRAC
tOED
tOEZ
VALID
DATA-OUT
tDS
tDH
VALID
DATA-IN
Donâ²t care
Undefined
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