 English |
|
|
|
|
|
|
|
| K4E170811D Datasheet, PDF (11/21 Pages) Samsung semiconductor – 2M x 8Bit CMOS Dynamic RAM with Extended Data Out | |||
| |||
| ◁ |
K4E170811D, K4E160811D
K4E170812D, K4E160812D
WRITE CYCLE ( OE CONTROLLED WRITE )
NOTE : DOUT = OPEN
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ3(7)
VIH -
VIL -
tRC
tRAS
tCRP
tRCD
tRAD
tASR tRAH
ROW
ADDRESS
tASC
tCSH
tRSH
tCAS
tRAL
tCAH
COLUMN
ADDRESS
tCWL
tRWL
tWP
tOED
tDS
tOEH
tDH
DATA-IN
CMOS DRAM
tRP
tCRP
Donâ²t care
Undefined
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese