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| K4E170811D Datasheet, PDF (20/21 Pages) Samsung semiconductor – 2M x 8Bit CMOS Dynamic RAM with Extended Data Out | |||
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K4E170811D, K4E160811D
K4E170812D, K4E160812D
CAS - BEFORE - RAS SELF REFRESH CYCLE
NOTE : OE, A = Donâ²t care
CMOS DRAM
VIH -
RAS
VIL -
VIH -
CAS
VIL -
DQ0 ~ DQ3(7)
VOH -
VOL -
VIH -
W
VIL -
tRP
tRPC
tCP
tCSR
tCEZ
tWRP
tWRH
tRASS
tRPS
tCHS
tRPC
OPEN
TEST MODE IN CYCLE
NOTE : OE , A = Donâ²t care
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
W
VIL -
DQ0 ~ DQ3(7)
VOH -
VOL -
tRP
tRPC
tCP
tCSR
tCHR
tWTS
tWTH
tOFF
tRC
tRAS
OPEN
tRP
tRPC
Donâ²t care
Undefined
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