K4E170811D Datasheet, PDF (15/21 Pages) Samsung semiconductor – 2M x 8Bit CMOS Dynamic RAM with Extended Data Out

K4E170811D, K4E160811D
K4E170812D, K4E160812D
HYPER PAGE READ-MODIFY-WRITE CYCLE
CMOS DRAM
VIH -
RAS
VIL -
tCSH
tRASP
tRP
tRSH
VIH -
CAS
VIL -
VIH -
A
VIL -
tCRP
tRCD
tRAD
tRAH
tASR
tASC
ROW
ADDR
COL.
ADDR
tCAS
tCAH
tRCS
tCWL
tHPRWC
tCP
tCAS
tASC
tCAH
COL.
ADDR
tRAL
tRWL
tCWL
tCRP
VIH -
W
VIL -
tWP
tCWD
tAWD
tRWD
tWP
tCWD
tAWD
tCPWD
VIH -
OE
VIL -
DQ0 ~ DQ3(7)
VI/OH -
tOEA
tOEA
tCAC
tAA
tRAC
tOED
tOEZ
tDH
tDS
tCAC
tAA
tOED
tOEZ
tDH
tDS
VI/OL -
tCLZ
tOLZ
VALID
DATA-OUT
tCLZ
VALID
DATA-IN
tOLZ
VALID
DATA-OUT
VALID
DATA-IN
Don′t care
Undefined