M393T3253FG Datasheet, PDF (12/18 Pages) Samsung semiconductor – DDR2 Registered SDRAM MODULE 240pin Registered Module based on 256Mb F-die 72-bit ECC

256MB, 512MB Registered DIMMs
DDR2 SDRAM
Operating Current Table(1-2) (TA=0^oC, VDD= 1.9V)
M393T6450FG(Z)0 / M393T6450FG(Z)3 / M393T6450FZA : 512MB(64Mx4 *18) Module
Symbol
IDD6*
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
Normal
IDD7
E6
(DDR2-667@CL=5)
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
D5
(DDR2-533@CL=4)
2,420
2,640
784
1,110
1,090
1,190
600
1,840
3,550
3,230
3,610
90
5,540
CC
(DDR2-400@CL=3)
Unit
2,250
mA
2,400
mA
724
mA
1,040
mA
1,060
mA
1,130
mA
570
mA
1,730
mA
2,810
mA
2,730
mA
3,430
mA
90
mA
5,210
mA
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Notes
Input/Output Capacitance(VDD=1.8V, VDDQ=1.8V, TA=25^oC)
Parameter
Part-Number
Symbol
Input capacitance, CK and CK
CCK
Input capacitance, CKE and CS
CI1
Input capacitance, Addr,RAS,CAS,WE
CI2
Input/output capacitance, DQ, DM, DQS, DQS
CIO
* DM is internally loaded to match DQ and DQS identically.
Min
Max
M393T3253FG(Z)0
M393T3253FG(Z)3
M393T3253FZA
-
11
-
12
-
12
-
10
Min
Max
M393T6453FG(Z)0
M393T6453FG(Z)3
M393T6453FZA
-
11
-
12
-
12
-
10
Min
Max
M393T6450FG(Z)0
M393T6450FG(Z)3
M393T6450FZA
-
11
-
12
-
12
-
10
Units
pF
Rev. 1.3 Aug. 2005