M393T3253FG Datasheet, PDF (11/18 Pages) Samsung semiconductor – DDR2 Registered SDRAM MODULE 240pin Registered Module based on 256Mb F-die 72-bit ECC

256MB, 512MB Registered DIMMs
DDR2 SDRAM
Operating Current Table(1-1) (TA=0^oC, VDD= 1.9V)
M393T3253FG(Z)0 / M393T3253FG(Z)3 / M393T3253FZA : 256MB(32Mx8 *9) Module
Symbol
E6
(DDR2-667@CL=5)
D5
(DDR2-533@CL=4)
CC
(DDR2-400@CL=3)
Unit
IDD0
TBD
1,420
1,265
mA
IDD1
TBD
1,540
1,330
mA
IDD2P
TBD
562
522
mA
IDD2Q
TBD
715
665
mA
IDD2N
TBD
730
670
mA
IDD3P-F
TBD
750
720
mA
IDD3P-S
TBD
375
365
mA
IDD3N
TBD
1,180
1,065
mA
IDD4W
TBD
2,115
1,635
mA
IDD4R
TBD
1,840
1,520
mA
IDD5B
TBD
2,005
1,900
mA
IDD6*
Normal
TBD
45
45
mA
IDD7
TBD
2,975
2,885
mA
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Notes
M393T6453FG(Z)0 / M393T6453FG(Z)3 / M393T6453FZA : 512MB(32Mx8 *18) Module
Symbol
IDD6*
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
Normal
IDD7
E6
(DDR2-667@CL=5)
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
D5
(DDR2-533@CL=4)
1,790
1,920
784
1,110
1,090
1,190
600
1,480
2,515
2,240
2,395
90
3,605
CC
(DDR2-400@CL=3)
Unit
1,665
mA
1,770
mA
724
mA
1,040
mA
1,060
mA
1,130
mA
570
mA
1,415
mA
2,045
mA
1,920
mA
2,260
mA
90
mA
3,365
mA
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Notes
Rev. 1.3 Aug. 2005