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M393B1K73DH0 Datasheet, PDF (10/56 Pages) Samsung semiconductor – 240pin Registered DIMM
Registered DIMM
datasheet
Rev. 1.3
DDR3 SDRAM
9. Registering Clock Driver Specification
9.1 Timing & Capacitance values
Symbol
Parameter
Conditions
fclock
tCH/tCL
Input Clock Frequency
Pulse duration, CK, CK HIGH or LOW
tACT
Inputs active time4 before RESET is taken HIGH
tSU
Setup time
tH
Hold time
tPDM
tDIS
tEN
CIN(DATA)
CIN(CLOCK)
CIN(RST)
Propagation delay, single-bit switching
output disable time(1/2-Clock pre-launch)
output disable time(3/4-Clock pre-launch)
output enable time(1/2-Clock pre-launch)
output enable time(3/4-Clock pre-launch)
Data Input Capacitance
Data Input Capacitance
Reset Input Capacitance
application frequency
DCKE0/1 = LOW and
DCS0/1 = HIGH
Input valid before CK/CK
Input to remain Valid after CK/
CK
CK/CK to output
CK/CK to output float
CK/CK to output driving
TC = TBD
VDD = 1.5 ± 0.075V
Min
Max
300
670
0.4
-
8
-
100
-
175
-
0.65
1.0
0.5
-
0.25
-
-
0.5
-
0.25
1.5
2.5
2
3
-
3
Units Notes
MHz
tCK
tCK
ps
ns
tCK
tCK
pF
9.2 Clock driver Characteristics
Symbol
Parameter
Conditions
tjit (cc)
tSTAB
tfdyn
tCKsk
tjit(per)
tjit(hper)
tQsk1
tQsk1
tdynoff
Cycle-to-cycle period jitter
Stabilization time
Dynamic phase offset
Clock Output skew
Yn Clock Period jitter
Half period jitter
Qn Output to clock tolerance (Standard 1/2 -Clock
Pre-Launch)
Output clock tolerance (3/4 Clock Pre-Launch)
Maximum re-driven dynamic clock off-set
Output Inversion enabled
OUtput Inversion disabled
Output Inversion enabled
OUtput Inversion disabled
TC = TBD
VDD = 1.5 ± 0.075V
Min
Max
0
40
-
6
-50
50
50
-40
40
-50
50
-100
200
-100
300
-100
200
-100
300
-80
80
Units Notes
ps
us
ps
ps
ps
ps
ps
ps
ps
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