M16C30P Datasheet, PDF (52/57 Pages) Renesas Technology Corp – SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

M16C/30P Group
5. Electrical Characteristics
Memory Expansion Mode, Microprocessor Mode
(for 1-wait setting and external area access)
Read timing
BCLK
CSi
td(BCLK−CS)
30ns.max
tcyc
VCC1=VCC2=3V
th(BCLK−CS)
0ns.min
ADi
BHE
ALE
RD
DBi
Write timing
BCLK
CSi
td(BCLK−AD)
30ns.max
td(BCLK−ALE)
30ns.max
th(BCLK−ALE)
−4ns.min
th(BCLK−AD)
0ns.min
th(RD−AD)
0ns.min
Hi−Z
td(BCLK−RD)
30ns.max
tac2(RD−DB)
(1.5 × tcyc−60)ns.max
tsu(DB−RD)
50ns.min
th(BCLK−RD)
0ns.min
th(RD−DB)
0ns.min
td(BCLK−CS)
30ns.max
tcyc
th(BCLK−CS)
0ns.min
ADi
BHE
ALE
WR,WRL,
WRH
DBi
td(BCLK−AD)
30ns.max
th(BCLK−AD)
0ns.min
td(BCLK−ALE)
30ns.max
th(BCLK−ALE)
−4ns.min
td(BCLK−WR)
30ns.max
th(WR−AD)
(0.5 × tcyc−10)ns.min
th(BCLK−WR)
0ns.min
Hi−Z
td(BCLK−DB)
40ns.max
th(BCLK−DB)
4ns.min
tcyc=
1
f(BCLK)
td(DB−WR)
(0.5 × tcyc−40)ns.min
th(WR−DB)
(0.5 × tcyc−10)ns.min
Measuring conditions
· VCC1=VCC2=3V
· Input timing voltage : VIL=0.6V, VIH=2.4V
· Output timing voltage : VOL=1.5V, VOH=1.5V
Figure 5.13 Timing Diagram (5)
Rev.1.22 Mar 30, 2007 Page 52 of 53
REJ03B0088-0122