M16C30P Datasheet, PDF (26/57 Pages) Renesas Technology Corp – SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

M16C/30P Group
5. Electrical Characteristics
Table 5.4 Flash Memory Version Electrical Characteristics ⁽¹⁾
Symbol
−
−
−
−
−
−
−
tPS
−
Parameter
Program and Erase Endurance ⁽²⁾
Word Program Time (VCC1=5.0V)
Lock Bit Program Time
Block Erase Time
(VCC1=5.0V)
Flash Memory Circuit Stabilization Wait Time
Data Hold Time ⁽⁴⁾
4-Kbyte block
8-Kbyte block
32-Kbyte block
64-Kbyte block
Min.
100⁽³⁾
Standard
Typ.
25
25
0.3
0.3
0.5
0.8
10
Max.
200
200
4
4
4
4
15
Unit
cycle
μs
μs
s
s
s
s
μs
year
NOTES:
1. Referenced to VCC1=4.5 to 5.5V, 3.0 to 3.6V at Topr = 0 to 60 °C (U3, U5) unless otherwise specified.
2. Program and Erase Endurance refers to the number of times a block erase can be performed.
If the program and erase endurance is 100, each block can be erased 100 times.
For example, if a 4 Kbytes block A is erased after writing 1 word data 2,048 times, each to a different address, this counts as
one program and erase endurance. Data cannot be written to the same address more than once without erasing the block.
(Rewrite prohibited)
3. Maximum number of E/W cycles for which operation is guaranteed.
4. Topr = -40 to 85 °C (U3) / -20 to 85 °C (U5).
Table 5.5 Flash Memory Version Program / Erase Voltage and Read Operation Voltage
Characteristics
Flash Program, Erase Voltage
VCC1 = 3.3 ± 0.3 V or 5.0 ± 0.5 (Topr = 0°C to 60°C )
Flash Read Operation Voltage
VCC1=2.7 to 5.5 V (Topr = -40°C to 85°C (U3)
-20°C to 85°C (U5))
Rev.1.22 Mar 30, 2007 Page 26 of 53
REJ03B0088-0122