M16C30P Datasheet, PDF (42/57 Pages) Renesas Technology Corp – SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

M16C/30P Group
5. Electrical Characteristics
Table 5.28 Electrical Characteristics (2) ⁽¹⁾
Symbol
Parameter
Measuring Condition
Standard
Unit
Min. Typ. Max.
ICC
Power Supply Current
In single-chip
Mask ROM f(XIN)=10MHz
(VCC1=VCC2=2.7V to 3.6V) mode, the output
No division
pins are open and _{One Time}
other pins are VSS _Flash
f(XIN)=10MHz,
No division
8
11 mA
8
13 mA
Flash
Memory
f(XIN)=10MHz,
No division
8
13 mA
Flash Memory f(XIN)=10MHz,
Program
VCC1=3.0V
12
mA
One Time
f(XIN)=10MHz,
Flash Program VCC1=3.0V
12
mA
Flash Memory f(XIN)=10MHz,
Erase
VCC1=3.0V
22
mA
Mask ROM
f(XCIN)=32kHz
Low power dissipation
mode, ROM ⁽³⁾
25
μA
One Time
Flash
f(XCIN)=32kHz
Low power dissipation
mode, RAM ⁽³⁾
25
μA
f(XCIN)=32kHz
Low power dissipation
mode, Flash Memory ⁽³⁾
350
μA
Flash Memory f(XCIN)=32kHz
Low power dissipation
mode, RAM ⁽³⁾
25
μA
f(XCIN)=32kHz
Low power dissipation
mode, Flash Memory ⁽³⁾
420
μA
Mask ROM f(XCIN)=32kHz
One Time Flash Wait mode ⁽²⁾,
6.0
μA
Flash Memory Oscillation capability High
f(XCIN)=32kHz
Wait mode ⁽²⁾,
1.8
μA
Oscillation capability Low
Stop mode
Topr =25°C
0.7 3.0 μA
NOTES:
1. Referenced to VCC1=VCC2=2.7 to 3.3V, VSS = 0V at Topr = −20 to 85°C / −40 to 85°C, f(XIN)=10MHz unless otherwise
specified.
2. With one timer operated using fC32.
3. This indicates the memory in which the program to be executed exists.
Rev.1.22 Mar 30, 2007 Page 42 of 53
REJ03B0088-0122